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  Datasheet File OCR Text:
 Shenzhen SI Semiconductors Co., LTD.
Product Specification
MJE /MJE SERIES TRANSISTORS
MJE13003BRH
APPLICATION:
FLUORESCENT LAMP
ELECTRONIC BALLAST
Tc=25C Absolute Maximum RatingsTc=25C
TO-126
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
VALUE 600 400 9 1.0 20 150 -65-150
UNIT V V V A W C C
Collector Current
Total Power Dissipation Junction Temperature Storage Temperature
Tc=25C Electronic CharacteristicsTc=25C
SYMBOL ICBO ICEO VCEO VEBO Vcesat Vbesat TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.20A,IB=0.04A IC=0.75A,IB=0.25A IC=0.2A,IB=0.04A VCE=5V,IC=1mA DC Current Gain 7 10 5 1.5 3.5 S 1.0 40 400 9 0.30 0.50 1.2 V MIN MAX 100 250 UNIT A A
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
hFE
VCE=10V,IC=0.1A VCE=5V,IC=1A
Storage Time Falling Time
tS tf
VCC=5V,IC=0.25A, (UI9600)
Si semiconductors
2009.09

CHARACTERISTICS Collector-Base Cutoff Current www..com Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage


FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING

RoHS




W IDE SOA
RoHS COMPLIANT











V V V
1
Shenzhen SI Semiconductors Co., LTD.
Product Specification
Ptot
Tj=125
Tj=125
Tj=25
Tj=25 Tj= - 40
Vce=1.5V
Vcesat - Ic
Tj=125
Vbesat - Ic
)v(sebV
Tj=25
Tj= - 40
Tj=25 Tj=125
Si semiconductors
2009.09
01
)A(cI
1


1.0
1
0
4.1
Tj= - 40
6.1
hFE=5
hFE=5
01
1
1.0
8.1
2.1
8.0
6.0
4.0
2.0
01
01
)A(cI
)A(cI
www..com
)A(cI
10.0 1
01
Tj= - 40
Vce=5V


EFh
hFE - Ic
hFE - Ic
002 )(jT 051
001

SOA (DC)
%
PcTj
IS/B

2
MJE /MJE SERIES TRANSISTORS
MJE13003BRH
05
0
0
08
06
04
02
021 001
001
0001
)V(ecV

001
1
1
1.0
01



)v(secV
)A(cI
EFh
10.0 1
1.0
1
1
01 1.0 10.0
1
01
1.0
10.0
01
001
Shenzhen SI Semiconductors Co., LTD.
Product Specification
TO-126 TO-126 MECHANICAL DATA
SYMBOL A B B1 b c D E e min nom max SYMBOL L L1 P P1 Q Q1 R min
2.30 1.15 0.70 0.65 0.45 10.50 7.20 2.29
2.80 1.42 1.00 0.90 0.66 11.10 7.80
15.00 1.50 2.90 5.0 3.60 0.90 0.5*
www..com
Si semiconductors
2009.09

nom max 16.5 2.54 3.20 4.40 1.50
:
/UNITmm






3


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